Design of a Broadband MMIC Driver Amplifier with Enhanced Feedback and Temperature Compensation Technique
نویسندگان
چکیده
This paper presents a broadband GaN pseudo high-electron-mobility transistor (pHEMT) two-stage driver amplifier based on an enhanced feedback technique for wideband system. Through well-designed parameter values of the and matching structure circuit, relatively flat frequency response was obtained over wide band. Simultaneously, in order to reduce fluctuation current caused by environmental temperature, bias circuit with quiescent temperature compensation designed. The power amplifier, which implemented form monolithic microwave integrated (MMIC), designed drive high-power amplifier. 6 GHz 20 band had very small die size 1.5 × 1.2 mm2 due use optimized impedance structure. It exhibited small-signal gain 12.5 dB output 26 dBm. flatness this achieved as ±2.5 ±1 entire band, respectively. experimental results showed up 35 dBm OIP3, variation range ±5 mA after using circuit.
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ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11030498